发明名称 |
SEMICONDUCTOR TEMPERATURE SENSOR CIRCUIT, METHOD FOR ADJUSTING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a highly accurate temperature sensor circuit capable of operating in a fine process on a low power voltage. SOLUTION: When a drain current I<SB>OUT1</SB>of a second MOSFET 2 and a sum value I<SB>OUT2</SB>of a drain current of a third MOSFET 3 and a drain current of a fourth MOSFET 4 is equal to each other, temperature is detected on the basis of an output voltage V<SB>OUT</SB>of a transistor circuit. An operating point shift circuit 25 for shifting an operating point which occurs only at the drain current I<SB>OUT2</SB>of the third MOSFET 3 is provided. The operating point shift circuit 25 comprises the fourth MOSFET 4 connected to the third MOSFET 3 in parallel and a voltage supply source 14 for supplying the fourth MOSFET 4 with a gate voltage which makes the fourth MOSFET 4 operate in a saturation region. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007240157(A) |
申请公布日期 |
2007.09.20 |
申请号 |
JP20060058740 |
申请日期 |
2006.03.03 |
申请人 |
UNIV OF TOKYO |
发明人 |
SASAKI MASAHIRO;ASADA KUNIHIRO;IKEDA MAKOTO |
分类号 |
G01K7/01;H01L21/822;H01L27/04 |
主分类号 |
G01K7/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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