发明名称 SEMICONDUCTOR TEMPERATURE SENSOR CIRCUIT, METHOD FOR ADJUSTING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a highly accurate temperature sensor circuit capable of operating in a fine process on a low power voltage. SOLUTION: When a drain current I<SB>OUT1</SB>of a second MOSFET 2 and a sum value I<SB>OUT2</SB>of a drain current of a third MOSFET 3 and a drain current of a fourth MOSFET 4 is equal to each other, temperature is detected on the basis of an output voltage V<SB>OUT</SB>of a transistor circuit. An operating point shift circuit 25 for shifting an operating point which occurs only at the drain current I<SB>OUT2</SB>of the third MOSFET 3 is provided. The operating point shift circuit 25 comprises the fourth MOSFET 4 connected to the third MOSFET 3 in parallel and a voltage supply source 14 for supplying the fourth MOSFET 4 with a gate voltage which makes the fourth MOSFET 4 operate in a saturation region. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007240157(A) 申请公布日期 2007.09.20
申请号 JP20060058740 申请日期 2006.03.03
申请人 UNIV OF TOKYO 发明人 SASAKI MASAHIRO;ASADA KUNIHIRO;IKEDA MAKOTO
分类号 G01K7/01;H01L21/822;H01L27/04 主分类号 G01K7/01
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