FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE USING SAME

摘要

Provided is a field-effect transistor which has a high mobility and a low variation of mobility. A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a channel length direction and perpendicular to the substrate, and forming the semiconductor layer through coating process.