| 摘要 |
In one aspect of the invention, a light emitting device includes a substrate (110), and a multilayered structure (120) having an n-type semiconductor layer (122) formed in a light emitting region and a non-emission region on the substrate, an active layer (124) formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer (126) formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode (132) formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode (140,141,142,143) formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator (150) formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact.
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