| 摘要 |
Microelectromechanical device comprising: a substrate (SS); a first layer (Ci) of a piezoelectric material, deposited on a surface of said substrate; a second layer (C2) of a semiconductor material, deposited on said first layer; at least one suspended element (ES), formed by extensions of said layers that extend beyond an edge (B) of said substrate; and a field-effect transistor (FET) integrated into said second layer and into its extension, having at least one channel that extends at least partly within said suspended element, comprising electrodes (D, S1, G) connected to conductive tracks (PCD) that extend on top of said second layer and at least one of which passes underneath said edge of the substrate; characterized in that at least two conductive tracks connected to two respective electrodes of the field-effect transistor overlap, without electric contact between them, so as to form a three-dimensional interconnection structure. |
