| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor wherein the hump characteristic in its sub-threshold characteristic is suppressed without any newly added process. SOLUTION: The thin-film transistor substrate having a first conductivity-type thin-film transistor has a semiconductor layer 3 having a first conductivity-type channel region 32 interposed between source/drain regions 31, a gate electrode 6 formed on the side opposed via a gate insulating film 5 to the semiconductor layer 3, and openings 61 present in the gate electrodes 6 corresponding to both the ends 4 present in the channel-width direction of the channel region 32. Further, in each channel region 4 corresponding to each opening 61, each high-concentration impurity region is formed having a first conductivity-type impurity concentration higher than the channel region corresponding to the gate electrode 6. COPYRIGHT: (C)2008,JPO&INPIT
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