发明名称 Semiconductor device
摘要 A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.
申请公布号 US8115295(B2) 申请公布日期 2012.02.14
申请号 US201113020494 申请日期 2011.02.03
申请人 DANNO TADATOSHI;NAGAMINE TORU;MORI HIROSHI;ICHINOSE TSUKASA;RENESAS ELECTRONICS CORPORATION 发明人 DANNO TADATOSHI;NAGAMINE TORU;MORI HIROSHI;ICHINOSE TSUKASA
分类号 H01L23/12;H01L23/52;H01L23/04;H01L23/06;H01L23/31;H01L23/66;H01L25/04;H03G3/30 主分类号 H01L23/12
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