发明名称 Pre-charged high-speed level shifters
摘要 An integrated circuit structure includes a latch having a first output node and a second output node complementary to each other. A first pre-charge transistor has a source-drain path coupled between a positive power supply node and the first output node. A second pre-charge transistor has a source-drain path coupled between the positive power supply node and the second output node. The integrated circuit structure further includes a delay-inverter coupled between a signal input node and inputs of a first NMOS transistor and a second NMOS transistor in the latch. The delay-inverter is configured to allow one of the first pre-charge transistor and the second pre-charge transistor to pre-charge a respective one of the first output node and the second output node before an input signal at the signal input node arrives at a gate of a respective one of the first NMOS transistor and the second NMOS transistor.
申请公布号 US8115514(B2) 申请公布日期 2012.02.14
申请号 US20100750441 申请日期 2010.03.30
申请人 DENG KUO-LIANG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 DENG KUO-LIANG
分类号 H03K19/094 主分类号 H03K19/094
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