发明名称 Method of manufacturing a monolithic thin-film photovoltaic device with enhanced output voltage
摘要 The invention provides a method of manufacturing a monolithic thin-film photovoltaic cell or module with enhanced output voltage as high as 100 V or higher in a single microelectronic process without connecting in series a plurality of premanufactured solar cells. The method consists of forming a plurality of adjacent individual TSCs arranged on a common transparent substrate in the longitudinal direction of the substrate. Each TSC consists of a pair of PV cells having PIN and NIP structures, respectively, with substantially coplanar position of a P-doped layer of one of the cells with respect to an N-doped layer of another cell of the pair. A tunnel junction is formed between the cells of the pair by overlapping P-doped and N-doped layers in the area near the common transparent substrate. The alternating PIN and NIP structures are achieved by forming projections in a continuous monolithic structure of one type and filling the spaces between the projections with the material of the inverse structure of the other type.
申请公布号 US8114702(B2) 申请公布日期 2012.02.14
申请号 US20100802391 申请日期 2010.06.07
申请人 GILMAN BORIS;BORIS GILMAN 发明人 GILMAN BORIS
分类号 H01L21/00 主分类号 H01L21/00
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