发明名称 Method for fabricating a semiconductor device package
摘要 A method of fabricating a semiconductor device package is provided. The method includes providing a laminate comprising a dielectric film disposed on a first metal layer, said laminate having a dielectric film outer surface and a first metal layer outer surface; forming a plurality of vias extending through the laminate according to a predetermined pattern; attaching one or more semiconductor device to the dielectric film outer surface such that the semiconductor device contacts one or more vias after attachment; disposing an electrically conductive layer on the first metal layer outer surface and on an inner surface of the plurality of vias to form an interconnect layer comprising the first metal layer and the electrically conductive layer; and patterning the interconnect according to a predetermined circuit configuration to form a patterned interconnect layer, wherein a portion of the patterned interconnect layer extends through one or more vias to form an electrical contact with the semiconductor device. A semiconductor device package is also provided.
申请公布号 US8114712(B1) 申请公布日期 2012.02.14
申请号 US20100975466 申请日期 2010.12.22
申请人 MCCONNELEE PAUL ALAN;GOWDA ARUN VIRUPAKSHA;GENERAL ELECTRIC COMPANY 发明人 MCCONNELEE PAUL ALAN;GOWDA ARUN VIRUPAKSHA
分类号 H01L21/50;H01L21/44;H01L21/48 主分类号 H01L21/50
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