发明名称 |
Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
摘要 |
A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials. |
申请公布号 |
US8114220(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20060911616 |
申请日期 |
2006.04.14 |
申请人 |
VISINTIN PAMELA M.;KORZENSKI MICHAEL B.;BAUM THOMAS H.;ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
VISINTIN PAMELA M.;KORZENSKI MICHAEL B.;BAUM THOMAS H. |
分类号 |
B08B3/04;C11D1/00;C11D3/26;C11D3/28 |
主分类号 |
B08B3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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