发明名称 |
Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus |
摘要 |
There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film. |
申请公布号 |
US8114217(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20080166997 |
申请日期 |
2008.07.02 |
申请人 |
JYUMONJI MASAYUKI;OGAWA HIROYUKI;MATSUMURA MASAKIYO;HIRAMATSU MASATO;KIMURA YOSHINOBU;TANIGUCHI YUKIO;KATO TOMOYA;SHARP KABUSHIKI KAISHA |
发明人 |
JYUMONJI MASAYUKI;OGAWA HIROYUKI;MATSUMURA MASAKIYO;HIRAMATSU MASATO;KIMURA YOSHINOBU;TANIGUCHI YUKIO;KATO TOMOYA |
分类号 |
C30B1/02;G02F1/136;B23K26/06;C30B13/24;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/786 |
主分类号 |
C30B1/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|