发明名称 Semiconductor device
摘要 According to one embodiment, there is a semiconductor device including a first active element, a second active element connected in parallel with the first active element, and a first stabilization circuit connected between a gate of the first active element and a gate of the second active element and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, the first stabilization circuit having a resonant frequency equal to an odd mode resonant frequency.
申请公布号 US8115554(B2) 申请公布日期 2012.02.14
申请号 US201113211806 申请日期 2011.08.17
申请人 NG CHOON YOUNG;TAKAGI KAZUTAKA;TOMITA NAOTAKA;KABUSHIKI KAISHA TOSHIBA 发明人 NG CHOON YOUNG;TAKAGI KAZUTAKA;TOMITA NAOTAKA
分类号 H03F3/68 主分类号 H03F3/68
代理机构 代理人
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