发明名称 |
Memory devices having diodes and resistors electrically connected in series |
摘要 |
A non-volatile memory devices includes: a substrate including a circuit device and a metal line electrically connected with the circuit device; a diode connected with the metal line in a vertical direction with respect to a surface of the substrate, and including a metal layer disposed on a lower part of the diode facing the surface of the substrate; and a resistor electrically connected with the diode in series. |
申请公布号 |
US8115258(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20100661117 |
申请日期 |
2010.03.11 |
申请人 |
SHIM BYUNG SUP;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM BYUNG SUP |
分类号 |
H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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