发明名称 Memory devices having diodes and resistors electrically connected in series
摘要 A non-volatile memory devices includes: a substrate including a circuit device and a metal line electrically connected with the circuit device; a diode connected with the metal line in a vertical direction with respect to a surface of the substrate, and including a metal layer disposed on a lower part of the diode facing the surface of the substrate; and a resistor electrically connected with the diode in series.
申请公布号 US8115258(B2) 申请公布日期 2012.02.14
申请号 US20100661117 申请日期 2010.03.11
申请人 SHIM BYUNG SUP;SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM BYUNG SUP
分类号 H01L29/861 主分类号 H01L29/861
代理机构 代理人
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