| 摘要 |
A plasma processing apparatus is provided to minimize the loss of radical and facilitate an ashing process by selectively removing ion within plasma supplied from a plasma chamber to a processing chamber. A plasma processing apparatus(10) comprises a processing chamber(100), a plasma chamber(200), and a plasma supply member(300). The processing chamber has a space(S) for performing the plasma process. The plasma chamber produces plasma to be supplied to the processing chamber. The plasma supply member, disposed between the plasma chamber and the processing chamber, comprises a plurality of multi-layered plate members for selectively permeating plasma particles that are supplied from the plasma chamber to the processing chamber. The plasma supply member comprises a first injection plate(310) made of quartz, having a plurality of first through holes, a second injection plate(320) made of metal, and disposed lower than the first injection plate having a plurality of second through holes, and a third injection plate(330) made of quartz, and disposed lower than the second injection plate to prevent residual contaminants on a wafer(W) under the plasma process from attaching onto the plasma supply member.
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