发明名称 |
Semiconductor single crystal growth method having improvement in oxygen concentration characteristics |
摘要 |
The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm. |
申请公布号 |
US8114216(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20080263000 |
申请日期 |
2008.10.31 |
申请人 |
CHO HYON-JONG;SHIN SEUNG-HO;MOON JI-HUN;LEE HONG-WOO;HONG YOUNG-HO;SILTRON, INC. |
发明人 |
CHO HYON-JONG;SHIN SEUNG-HO;MOON JI-HUN;LEE HONG-WOO;HONG YOUNG-HO |
分类号 |
C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
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