Nanorod-based semiconductor light emitting device and method of manufacturing the same

摘要

PURPOSE: A semiconductor light emitting device based on nanorods and a manufacturing method thereof are provided to block current leakage on surfaces of a nanorod and an interface by limiting an electron to an AlGaN(Aluminium gallium nitride) nanorod with a AlGaN /GaN(Gallium Nitride) nanorod implanting layer. CONSTITUTION: An AlGaN(Aluminium gallium nitride) nanorod(140) is formed on a first conductive semiconductor layer and extended onto the first conductive semiconductor layer. An n-GaN(Gallium Nitride) shell layer(150) covers a side and upper side of the AlGaN nanorod and forms an inner shell of a nanorod structure. An active layer and a second conductive semiconductor layer successively cover the n-GaN shell layer. An AlGaN/GaN nanorod insertion layer(130) is formed between the first conductive semiconductor layer and the AlGaN nanorod. The AlGaN layer and the GaN layer are alternatively laminated and an AlGaN/GaN nanorod insertion layer is formed.