发明名称 |
Nonvolatile memory device |
摘要 |
A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress. |
申请公布号 |
US8115245(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20090554581 |
申请日期 |
2009.09.04 |
申请人 |
YOSHIMIZU YASUHITO;AISO FUMIKI;FUKUMOTO ATSUSHI;NAKAO TAKASHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIMIZU YASUHITO;AISO FUMIKI;FUKUMOTO ATSUSHI;NAKAO TAKASHI |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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