发明名称 |
Integrated circuit system with memory system |
摘要 |
A method for forming an integrated circuit system is provided including forming a memory section having a spacer with a substrate, forming an outer doped region of the memory section in the substrate, forming a barrier metal layer over the spacer, and forming a metal plug over the outer doped region and the barrier metal layer. |
申请公布号 |
US8114736(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20070958254 |
申请日期 |
2007.12.17 |
申请人 |
CHAN SIMON SIU-SING;SHIRAIWA HIDEHIKO;CHANG KUO-TUNG;HUI ANGELA T.;GLOBALFOUNDRIES INC.;SPANSION LLC |
发明人 |
CHAN SIMON SIU-SING;SHIRAIWA HIDEHIKO;CHANG KUO-TUNG;HUI ANGELA T. |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|