发明名称 Integrated circuit system with memory system
摘要 A method for forming an integrated circuit system is provided including forming a memory section having a spacer with a substrate, forming an outer doped region of the memory section in the substrate, forming a barrier metal layer over the spacer, and forming a metal plug over the outer doped region and the barrier metal layer.
申请公布号 US8114736(B2) 申请公布日期 2012.02.14
申请号 US20070958254 申请日期 2007.12.17
申请人 CHAN SIMON SIU-SING;SHIRAIWA HIDEHIKO;CHANG KUO-TUNG;HUI ANGELA T.;GLOBALFOUNDRIES INC.;SPANSION LLC 发明人 CHAN SIMON SIU-SING;SHIRAIWA HIDEHIKO;CHANG KUO-TUNG;HUI ANGELA T.
分类号 H01L21/336;H01L29/788 主分类号 H01L21/336
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