发明名称 |
2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor |
摘要 |
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip. |
申请公布号 |
US8114215(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20080256663 |
申请日期 |
2008.10.23 |
申请人 |
SONG DO-WON;KIM YOUNG-HUN;JI EUN-SANG;CHOI YOUNG-KYU;JO HWA-JIN;SILTRON, INC. |
发明人 |
SONG DO-WON;KIM YOUNG-HUN;JI EUN-SANG;CHOI YOUNG-KYU;JO HWA-JIN |
分类号 |
C30B15/14;C30B11/00;C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C30B35/00 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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