| 摘要 |
A device for protecting a semiconductor device from electrostatic discharge may include a high voltage first conductivity type well formed in a semiconductor substrate. A first stack region may have a first conductivity type drift region, and a first conductivity type impurity region stacked in succession in the high voltage first conductivity type well. A second stack region may have a second conductivity type drift region, and a second conductivity type impurity region stacked in succession in the high voltage first conductivity type well. A device isolating film formed between the first stack region and the second stack region for isolating the first stack region from the second stack region. |
