发明名称 Low-cost high-density rectifier matrix memory
摘要 A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
申请公布号 US8116109(B2) 申请公布日期 2012.02.14
申请号 US201113065755 申请日期 2011.03.29
申请人 SHEPARD DANIEL R.;LANGDO THOMAS A.;PITERA ARTHUR J. 发明人 SHEPARD DANIEL R.;LANGDO THOMAS A.;PITERA ARTHUR J.
分类号 G11C5/02;G11C5/06;G11C11/00;G11C11/36 主分类号 G11C5/02
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