| 摘要 |
A method for producing on-chip interconnect structures on a substrate is provided, comprising at least the steps of providing a substrate and depositing a ruthenium-comprising layer on top of said substrate, and then performing a pre-treatment of the Ru-comprising layer electrochemically with an HBF4-based electrolyte, and then performing electrochemical deposition of copper onto the pre-treated Ru-comprising layer. |
