发明名称 |
Multi-angle rotation for ion implantation of trenches in superjunction devices |
摘要 |
A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall. |
申请公布号 |
US8114751(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20100914623 |
申请日期 |
2010.10.28 |
申请人 |
ISHIGURO TAKESHI;GRIFFIN HUGH J.;SUGIURA KENJI;ICEMOS TECHNOLOGY LTD. |
发明人 |
ISHIGURO TAKESHI;GRIFFIN HUGH J.;SUGIURA KENJI |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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