发明名称 Method for maskless particle-beam exposure
摘要 For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
申请公布号 US8115183(B2) 申请公布日期 2012.02.14
申请号 US20100770904 申请日期 2010.04.30
申请人 PLATZGUMMER ELMAR;IMS NANOFABRICATION AG 发明人 PLATZGUMMER ELMAR
分类号 G21K5/10 主分类号 G21K5/10
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