发明名称 |
Formation of a tantalum-nitride layer |
摘要 |
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer. |
申请公布号 |
US8114789(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20100846253 |
申请日期 |
2010.07.29 |
申请人 |
SEUTTER SEAN M.;YANG MICHAEL X.;XI MING;APPLIED MATERIALS, INC. |
发明人 |
SEUTTER SEAN M.;YANG MICHAEL X.;XI MING |
分类号 |
H01L21/469;C23C16/34;C23C16/44;C23C16/455;C23C16/56;H01L21/285;H01L21/768 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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