发明名称 |
Shallow extension regions having abrupt extension junctions |
摘要 |
A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed with a peak temperature ranging from 1200° C. to 1400° C., and a hold time period ranging from 1 millisecond to 5 milliseconds. |
申请公布号 |
US8114748(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20090491819 |
申请日期 |
2009.06.25 |
申请人 |
LEE KAM-LEUNG;RONSHEIM PAUL A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE KAM-LEUNG;RONSHEIM PAUL A. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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