发明名称 |
Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device |
摘要 |
A semiconductor element formed over the same substrate as a TFT, includes a semiconductor film having an impurity region; an insulating film formed over the semiconductor film; an electrode divided into a plurality of parts over the insulating film by spacing a distance a in a first direction (channel width direction); an insulator with a width b formed to be in contact with a side wall of the electrodes and an insulator formed in a region between the electrodes divided into a plurality of parts; a silicide layer formed over part of the surface of the impurity region; and characteristics of the TFT are evaluated by measuring resistance of the semiconductor film of the semiconductor element. |
申请公布号 |
US8115278(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20090477968 |
申请日期 |
2009.06.04 |
申请人 |
ISOBE ATSUO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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