发明名称 Plasma processing apparatus and focus ring
摘要 A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.
申请公布号 US8114247(B2) 申请公布日期 2012.02.14
申请号 US20100941701 申请日期 2010.11.08
申请人 ENDOH SHOSUKE;HIMORI SHINJI;TOKYO ELECTRON LIMITED 发明人 ENDOH SHOSUKE;HIMORI SHINJI
分类号 H01L21/3065;H05H1/46;C23C16/509;C23C16/52;H01J37/32;H01L21/00;H01L21/205;H01L21/68 主分类号 H01L21/3065
代理机构 代理人
主权项
地址