发明名称 |
Ferroelectric memory device and method for operating the same |
摘要 |
PURPOSE: A ferroelectric random access memory and an operating method thereof are provided to implement high integration by reducing a cell area. CONSTITUTION: A first electrode(10) faces a second electrode(40). A ferroelectric film(20) is located between the first electrode and the second electrode. A semiconductor film(30) is located between the ferroelectric film and the second electrode.
|
申请公布号 |
KR20120012915(A) |
申请公布日期 |
2012.02.13 |
申请号 |
KR20100075033 |
申请日期 |
2010.08.03 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
CHOI, DUCK KYUN;CHO, YONG JE |
分类号 |
G11C11/22;H01L27/105 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|