| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device which utilizes movement of the wall of a magnetic section having a high information storage density and a simple structure. SOLUTION: The memory device which utilizes the movement of the wall of the magnetic section includes a writing track 61 which is composed of a magnetic substance, contains a magnetic wall, and is formed in a first direction, a middle layer 62 which is formed on a first track, and an information storage track 63 which is formed on the middle track in a second direction, is composed of a magnetic substance, and contains a magnetic wall. COPYRIGHT: (C)2008,JPO&INPIT
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