CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME, AND PHOTOMASK BLANK

摘要

PURPOSE: A chemical amplification resist composition, a pattern forming method using the same, a photo-mask blank using the same are provided to improve the verticality of line patterns on the interface of a substrate and to secure superior etching resistance derived from pattern profiles. CONSTITUTION: A chemical amplification resist composition includes at least carboxyl group and one or more amine compound or amine oxide compound without hydrogen which is covalently bonded with nitrogen unless the nitrogen element of the amine compound or the amine oxide compound is included the cyclic structure of an aromatic ring. The nitrogen elements of the amine oxide compound are respectively bonded with different carbon elements. The resist composition further includes a base resin and/or the combination of the base resin and a cross-linking agent, and an acid generating agent. The base resin is alkali-soluble and becomes alkali-insoluble by an acid catalyst. Negative patterns are prepared by development after exposures using an alkali developing solution.