| 摘要 |
A TFT(Thin Film Transistor) substrate, a method of manufacturing the TFT substrate, and an LCD(Liquid Crystal Display) panel having the TFT substrate are provided to form a semiconductor layer between source and drain electrodes on the plane on which the source and drain electrodes are formed to improve ON characteristic of a TFT and improve electron mobility. A TFT substrate(100) includes a gate line, a gate insulating layer(130), an ohmic contact layer, source and drain electrodes(151,152), and a semiconductor layer(160). The gate line includes a gate electrode(120). The gate insulating layer covers the gate line. The ohmic contact layer is formed on the gate insulating layer and divided into two parts(141,142) having the gate electrode disposed between the two parts. The source and drain electrodes are respectively formed on the two parts of the ohmic contact layer. The semiconductor layer is formed between the source and drain electrodes. |
