发明名称 Semiconductor apparatus, method for manufacturing the same and method for manufacturing semiconductor package
摘要 <p>PURPOSE: A semiconductor device, a manufacturing method thereof, and a semiconductor package manufacturing method are provided to arrange a conductive capping layer on a penetration electrode, thereby preventing contamination of the surface of the penetration electrode. CONSTITUTION: A substrate in which a buried electrode is formed on a first surface is prepared. A carrier substrate is attached on the first surface of the substrate. The substrate in which the carrier substrate is attached is overturned. A second surface facing the first substrate is polished in order to form a penetration electrode(103) by exposing the lower surface of the buried electrode. A conductive capping layer(140) is arranged on the exposed lower surface of the penetration electrode. The second surface of the substrate is recessed in order to project the penetration electrode.</p>
申请公布号 KR20120012602(A) 申请公布日期 2012.02.10
申请号 KR20100074662 申请日期 2010.08.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, SE YOUNG;LEE, HO JIN;SONG, HO GEON;PHEE, JAE HYUN
分类号 H01L21/768;H01L23/12 主分类号 H01L21/768
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