发明名称 |
CAPACITOR STRUCTURE WITH RAISED RESONANCE FREQUENCY |
摘要 |
A dual-port capacitor structure includes a first electrode plate having a first opening; a second electrode plate having a second opening; and a third electrode plate, disposed in the first opening of the first electrode plate and the second opening of the second electrode plate. The first electrode plate, the second electrode plate and the third electrode plate locate on the same plane. |
申请公布号 |
US2012031654(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113278199 |
申请日期 |
2011.10.21 |
申请人 |
CHEN WEI-TING;CHEN CHANG-SHENG;SHYU CHIN-SUN;WEI CHANG-LIN;TSAI CHENG-HUA;CHIN KUO-CHIANG;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN WEI-TING;CHEN CHANG-SHENG;SHYU CHIN-SUN;WEI CHANG-LIN;TSAI CHENG-HUA;CHIN KUO-CHIANG |
分类号 |
H05K1/03;H01G4/005 |
主分类号 |
H05K1/03 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|