发明名称 Nonvolatile Memory Elements And Memory Devices Including The Same
摘要 Nonvolatile memory elements may include a first electrode, a second electrode, a first buffer layer, a second buffer layer and a memory layer. The memory layer may be between the first and second electrodes. The first butter layer may be between the memory layer and the first electrode. The second buffer layer may be between the memory layer and the second electrode. The memory layer may be a multi-layer structure including a first material layer and a second material layer. The first material layer may include a first metal oxide which is of the same group as, or a different group from, a second metal oxide included in the second material layer.
申请公布号 US2012032132(A1) 申请公布日期 2012.02.09
申请号 US201113204138 申请日期 2011.08.05
申请人 LEE SEUNG-RYUL;KIM CHANG-JUNG;KIM YOUNG-BAE;LEE MYOUNG-JAE;HUR JI-HYUN;LEE DONG-SOO;CHANG MAN;LEE CHANG-BUM;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEUNG-RYUL;KIM CHANG-JUNG;KIM YOUNG-BAE;LEE MYOUNG-JAE;HUR JI-HYUN;LEE DONG-SOO;CHANG MAN;LEE CHANG-BUM
分类号 H01L45/00 主分类号 H01L45/00
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