发明名称 |
GAS EXHAUST SYSTEM OF FILM-FORMING APPARATUS, FILM-FORMING APPARATUS, AND METHOD FOR PROCESSING EXHAUST GAS |
摘要 |
A film-forming apparatus includes a processing chamber, and TiCl4 gas and NH3 gas are supplied into the processing chamber for forming a TiN film on a substrate W in the processing chamber by CVD. The processing chamber has a gas exhaust system. The gas exhaust system includes a gas exhaust pipe for exhausting the exhaust gas in the processing chamber a trap mechanism provided to the gas exhaust pipe for trapping a by-product in the exhaust gas, and a heated reaction gas supply mechanism for supplying a heated reaction gas into the exhaust gas. The heated reaction gas is adapted to react with a component in the exhaust gas to produce a by-product. Specifically, NH3 gas is supplied by the heated reaction gas supply mechanism as the heated reaction gas, and NH4Cl is produced as the by-product. |
申请公布号 |
US2012031334(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113277040 |
申请日期 |
2011.10.19 |
申请人 |
TSUDA EINOSUKE;TOKYO ELECTRON LIMITED |
发明人 |
TSUDA EINOSUKE |
分类号 |
C23C16/34;B01D53/68;C23C16/455 |
主分类号 |
C23C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|