发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel formation region is formed. A semiconductor layer having a concavo-convex shape which is included in the semiconductor device is formed by the steps of forming a first semiconductor layer over a substrate; forming a first insulating layer and a conductive layer over the first semiconductor layer; forming a second insulating layer over a side surface of the conductive layer; forming a second semiconductor layer over the first insulating layer, the conductive layer and the second insulating layer; etching the second semiconductor layer using a resist formed partially as a mask; and performing heat treatment to the first semiconductor layer and the second semiconductor layer. |
申请公布号 |
US2012034744(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113277250 |
申请日期 |
2011.10.20 |
申请人 |
OHNUMA HIDETO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA HIDETO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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