HIGH VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME

摘要

A high voltage generating circuit and a semiconductor memory device including the same are provided to reduce the variation of a high voltage, by providing a CBR(CAS before RAS) pulse signal to each pumping part sequentially. A CBR pulse signal generation part(400) outputs a CBR(CAS before RAS) pulse signal by being enabled by a CBR refresh command signal. A counter(510) outputs a number of selection signals by counting the CBR pulse signal. A number of transmission parts(530_1-530_n) transmit the CBR pulse signal by being enabled in response to each selection signal. A number of pumping parts(220_1-220_n) correspond to the transmission parts, and generate a high voltage by using the transmitted CBR pulse signal.