<p>This semiconductor light-emitting element is provided with: an n-type nitride semiconductor layer (21); a p-type nitride semiconductor layer (23); an active layer region (22) that contains an m-plane nitride semiconductor layer and that is sandwiched by the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode (30) that is electrically connected to the n-type nitride semiconductor layer; a p-type electrode (40) that is electrically connected to the p-type nitride semiconductor layer; an emission surface that draws out polarized light arising at the active layer region to the outside; and a striped structure (50) that is provided to the emission surface and that has a plurality of convex sections that extend in a direction that forms an angle that is 5° to 80° inclusive or -80° to -5° inclusive with the a-axis direction of the m-plane nitride semiconductor layer.</p>
