| 摘要 |
A semiconductor device is provided with an MIS transistor (nTr). The MIS transistor (nTr) is provided with: an active region (10a) surrounded by an element-separating region (11) in a semiconductor substrate (10); a gate insulator film (16a) that is formed on the active region (10a) and the element-separating region (11), and has a high-dielectric-constant film (15a) ; and a gate electrode (19a) that is formed on the gate insulator film (16a). Nitride regions (20x, 20y) are disposed on at least part of the portion of the gate insulator film (16a) positioned over the element-separating region (11). When the nitrogen concentrations of the nitrogen contained in the nitride regions (20x, 20y) are regarded as n1 and n2, and the nitrogen concentrations contained in the portion of the gate insulator film (16a) positioned over the active region (10a) is regarded as n, the relational expression n1 > n and n2 > n holds. |
