| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thermal type air flow rate sensor for reducing a measurement error by suppressing the moisture absorption of a silicon oxide film formed most closely to the surface (in the uppermost layer). <P>SOLUTION: A thermal type air flow rate sensor is configured to carry out ion implanting by using at least any one atom or molecule from among inactive elements such as silicon, oxygen, argon, or nitrogen to a silicon oxide film 4 formed most closely to the surface (in the uppermost layer), and to make the density of the atom contained in the silicon oxide film 4 higher than that before carrying out ion implanting. <P>COPYRIGHT: (C)2012,JPO&INPIT |
