| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing III-V compound semiconductor optical element by which deterioration of quality of a surface of a semiconductor can be reduced, when a semiconductor crystal containing arsenic, phosphorous and nitrogen as group V constituent elements is grown. <P>SOLUTION: Temperature of a substrate E1 is changed toward a temperature T<SB POS="POST">G1</SB>for crystal growth. This temperature rise is executed while supplying organic phosphorous raw material G<SB POS="POST">TBP</SB>to a growth furnace 32. The temperature T<SB POS="POST">G1</SB>for crystal growth is 500°C or above. After change of the temperature is completed, a III-V compound semiconductor multilayer film 33 for a second semiconductor optical element is grown on the substrate E1 by using a mask 27 in the growth furnace 32. In the case of this temperature change, when the organic phosphorous raw material G<SB POS="POST">TBP</SB>is supplied without supplying organic arsenic raw material, deterioration of crystal quality due to desorption of phosphorous from surfaces 31a and 31c of a semiconductor mesa 31 is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
