| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reverse recovery capability of a diode while securing an active region of an insulated gate bipolar transistor (IGBT) region. <P>SOLUTION: An end portion 41a of a floating layer 41 in the extending direction of a trench 35 is located nearer to the outer edge side of an IGBT region 10 than an end portion 39a of an emitter region 39 in the extending direction of a trench 35, and is also located in between the end portion 39a of the emitter region 39 and an end portion 42c of a first contact hole 42a in the extending direction of the trench 35. This configuration removes holes through the first contact hole 42a not covered with the floating layer 41 when the IGBT element is turned off, and improves a turn-off tolerance. In addition, when a diode element is turned off, a reverse recovery current applied from the floating layer 41 to the emitter region 39 of the IGBT region 10 is suppressed and reverse recovery capability is improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
