| 摘要 |
The silica glass pot (1) with container shape for growth of silicon single crystal by Czochralski process, includes a transparent layer (3) formed at the inner periphery and an opaque layer (2) with large number of bubbles formed on the outer periphery. Polycrystalline silicon is filled into the inner space of the container, heated and melted, so that the silicon melt (M) is collected, and the Czochralski process produces a silicon single crystal. In a first bubble-free layer with a thickness of 100-450 mu m at the inner peripheral side, an initial melting line zone (10) is formed. The silica glass pot (1) with container shape for the growth of silicon single crystal by Czochralski process, includes a transparent layer (3) formed at the inner periphery and an opaque layer (2) with large number of bubbles formed on the outer periphery. A polycrystalline silicon material is filled into the inner space of the container, heated and melted, so that the silicon melt (M) is collected, and the Czochralski process produces a silicon single crystal. In a first bubble-free layer with a thickness of 100-450 mu m at the inner peripheral side, an initial melting line zone (10) is formed, which has a height of 10-30 mm of the transparent layer. A bubble containing layer with a thickness of 100 mu m or more and with bubbles with an average diameter of 20-60 mu m is formed outside of the first bubble-free layer. A second bubble-free layer with a thickness of 300 mu m or more in the inner peripheral side is formed in the opaque layer of the total region, which lies below the initial melting line zone. The density of the bubbles that are contained in the bubble containing layer, is 5-70/mm3>. |
