| 摘要 |
PURPOSE: Silicon carbide and a method for manufacturing the same are provided to reduce a cost required for manufacturing processes by reducing the particle sizes of the silicon carbide and obtaining the uniform particle of the silicon carbide. CONSTITUTION: A method for manufacturing silicon carbide includes the following: Dry silicon source and silicon carbon source are mixed(ST10). The mixed source is heated to obtain silicon carbide(ST20). At least one average diameter of the dry silicon source and the silicon carbon source is between 10 and 100nm. The silicon carbon source includes at least one material selected from a group including graphite, carbon black, carbon nanotube, and fullerene. The dry silicon source includes silica.
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