| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor device which is used in an LED, a photocoupler, a photointerrupter, or the like, that has its emission wavelength in a range from near-ultraviolet through visible light (wavelength 340-800 nm), and in which reflectivity is good when a chip emitting light in a near-ultraviolet range (wavelength 340-400 nm), especially a wavelength of around 375 nm, and in a visible light range (wavelength 400-800 nm), especially a wavelength of around 450 nm, is mounted and high luminance and excellent heat dissipation are ensured. <P>SOLUTION: The lead frame for an optical semiconductor device has a reflective layer partially or entirely at least on one side or both sides of the outermost surface of a substrate. On the outermost surface at least in a region where light emitted from an optical semiconductor element is reflected, the reflective layer has such a texture as a plating texture composed of silver or a silver alloy and deformed plastically. <P>COPYRIGHT: (C)2012,JPO&INPIT |
