| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can expand the tolerances regarding mask alignment and dimensional accuracy and a method for manufacturing the same. <P>SOLUTION: According to an embodiment, a nonvolatile semiconductor storage device is provided which comprises a laminated structure, a semiconductor pillar, a storage part, and a semiconductor connection part. The laminated structure includes a plurality of electrode films and a plurality of interelectrode insulating films which are alternately stacked one on top of another. The semiconductor pillar penetrates the laminated structure. The storage part is disposed between the electrode film and the semiconductor pillar. The semiconductor connection part connects two semiconductor pillars together at one end thereof. The semiconductor connection part includes an end connecting portion having a connecting side face along a direction perpendicular to the direction of the laminated structure and a protruded portion having a continuous side face on the side face of the semiconductor pillar. The semiconductor connection part does not include any portion smaller in diameter than the semiconductor pillar. <P>COPYRIGHT: (C)2012,JPO&INPIT |
