发明名称 |
Forming Resistive Random Access Memories Together With Fuse Arrays |
摘要 |
A resistive random access memory array may be formed on the same substrate with a fuse array. The random access memory and the fuse array may use the same active material. For example, both the fuse array and the memory array may use a chalcogenide material as the active switching material. The main array may use a pattern of perpendicular sets of trench isolations and the fuse array may only use one set of parallel trench isolations. As a result, the fuse array may have a conductive line extending continuously between adjacent trench isolations. In some embodiments, this continuous line may reduce the resistance of the conductive path through the fuses. |
申请公布号 |
US2012032136(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US20100849864 |
申请日期 |
2010.08.04 |
申请人 |
REDAELLI ANDREA;PIREVANO AGOSTINO;MEOTTO UMBERTO M.;SERVALLI GIORGIO |
发明人 |
REDAELLI ANDREA;PIREVANO AGOSTINO;MEOTTO UMBERTO M.;SERVALLI GIORGIO |
分类号 |
H01L45/00;H01L21/82 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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