| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor cooling device capable of efficiently conducting transitional heat generated at a semiconductor element to a heat absorption section. <P>SOLUTION: A semiconductor element 51 and a heat absorption section 56 are mounted on one surface 55a of an electrode section 55. A graphite heat diffusion plate 54 is used as the electrode section 55. In the graphite heat diffusion plate 54, each of one direction parallel to the one surface 55a of the electrode section 55 and a thickness direction from the semiconductor element 51 toward a first cooler 10 is a high heat conductivity direction in which heat conductivity is higher at the one direction and the thickness direction than a direction different from the one direction and the thickness direction. The heat absorption section 56 is disposed on an extension line of the one direction from a disposed place of the semiconductor element 51 on the one surface 55a of the electrode section 55. With this configuration, a transitional heat generated at the semiconductor element 51 is conducted from the semiconductor element 51 to the graphite heat diffusion plate 54 and also efficiently conducted to the heat absorption section 56 along the one direction that is a high heat conductivity direction, thus the semiconductor element 51 can be prevented from easily reaching an operation limit temperature due to the transitional heat. <P>COPYRIGHT: (C)2012,JPO&INPIT |
