| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device having excellent high-frequency characteristics, and to provide a method for driving the same. <P>SOLUTION: The optical semiconductor device includes: a first optical waveguide 18a which is a part of an intrinsic semiconductor layer 14; a second optical waveguide 18b formed in the first side of the first optical waveguide; first impurity regions 19 and 20 of a first conductive type formed in the second side of the first optical waveguide; a second impurity region 21 of a second conductive type formed in the first side of the first optical waveguide; a third impurity region 22 of the first conductive type formed in the second side of the second optical waveguide; fourth impurity regions 23 and 24 of the second conductive type formed in the first side of the second optical waveguide; a first capacitor 32a having a first lower electrode which is a part of the second impurity region, and a first upper electrode 30a; a fifth impurity region 25 of the second conductive type formed in the lower part of the first upper electrode; a second capacitor 32b having a second lower electrode which is a part of the fourth impurity regions, and a second upper electrode 30b; and a sixth impurity region 26 of the first conductive type formed in the lower part of the second upper electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
